Team led by Bolin Liao has been awarded a $1.9M NSF grant on "AI-Enhanced Material-Device Codesign of Boron Arsenide as the Next-Generation Semiconductor".  This grant will support an effort to develop the next-generation semiconductor boron arsenide.  UCSB's share is $1M, to be shared between Bolin and co-investigators Chris Palmstrom and Stephen Wilson.  There are also partners at UC Irvine, U. Houston, and Notre Dame.

 

More information on this NSF initiative is available here:

 

 

The grant that Bolin will lead is listed under Topic 3: New Materials for Energy-Efficient, Enhanced-Performance and Sustainable Semiconductor-Based Systems.